Sayeef Salahuddin is an associate professor of Electrical Engineering and Computer Sciences at the University of California, Berkeley. His research interests are in the interdisciplinary field of electronic transport in nanostructures currently focusing on novel electronic and spintronic devices for low power logic and memory applications. For his work Salahuddin has received the Presidential Early Career Award for Scientist and Engineers (PECASE), the highest honor bestowed by the US Government on early career scientist and engineers. In addition Salahuddin received a number of awards including the NSF CAREER award, the IEEE Nanotechnology Early Career Award, the Young Investigator Awards from the AFOSR and the ARO and best paper awards from IEEE Transactions on VLSI Systems and from the VLSI-TSA conference. He is on the editorial board of IEEE Electron Devices Letters and currently chairs the Electron Devices Society committee on Nanotechnology.
Phase transition materials have long been investigated for fundamental physics and also for potential application in electronics. In this presentation, I shall discuss how a controlled manipulation of the stored energy of phase transition can lead to a state of negative capacitance, especially within the context of ferroelectric materials. Our recent experiments with ferroelectric materials have shown that such a state of negative capacitance can actually be achieved. Negative capacitance can be combined with conventional transistors to achieve steep subthreshold swing. We have recently demonstrated this effect in a scaled transistor. These results and their implications will be discussed.